B564 Technical Specications of NPN Epitaxial Planar Transistor

รหัสสินค้า : B564TSoNPNEPT

Type Designator: 2SB564

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 55 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

 Part No : ELE-CH061052065